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PTF080901E Datasheet, Infineon Technologies AG

PTF080901E mhz equivalent, ldmos rf power field effect transistor 90 w/ 869-960 mhz.

PTF080901E Avg. rating / M : 1.0 rating-19

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PTF080901E Datasheet

Features and benefits


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* Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at .

Application

in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features
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